SI4963BDY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4963BDY-T1-E3 is a SI4963BDY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 4.9A 1.1W 32mΩ@6.5A,4.5V 1.4V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 4.9A
• Power Dissipation (Pd): 1.1W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 32mΩ@6.5A,4.5V
• Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
• Type: 2 P-Channel
• Total Gate Charge (Qg@Vgs): [email protected]
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.