SI4966DY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI4966DY-T1-E3 is a SI4966DY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 2W 25mΩ@4.5V,7.1A 1.5V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Power Dissipation (Pd): 2W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@4.5V,7.1A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

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Full Specifications of SI4966DY-T1-E3

Model NumberSI4966DY-T1-E3
Model NameVishay Intertech SI4966DY-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description20V 2W 25mΩ@4.5V,7.1A 1.5V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)-
Power Dissipation (Pd)2W
Drain Source On Resistance (RDS(on)@Vgs,Id)25mΩ@4.5V,7.1A
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type2 N-Channel

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