SI5411EDU-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI5411EDU-T1-GE3 is a SI5411EDU-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 25A 8.2mΩ@4.5V,6A 31W 900mV@250uA 1PCSPChannel DFN-8(1.9x3) MOSFETs ROHS. This product comes in a DFN-8(1.9x3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 25A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.2mΩ@4.5V,6A
  • Power Dissipation (Pd): 31W
  • Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.

More on SI5411EDU-T1-GE3

Full Specifications of SI5411EDU-T1-GE3

Model NumberSI5411EDU-T1-GE3
Model NameVishay Intertech SI5411EDU-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description12V 25A 8.2mΩ@4.5V,6A 31W 900mV@250uA 1PCSPChannel DFN-8(1.9x3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.400 grams / 0.01411 oz
Package / CaseDFN-8(1.9x3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.2mΩ@4.5V,6A
Power Dissipation (Pd)31W
Gate Threshold Voltage (Vgs(th)@Id)900mV@250uA
Type1PCSPChannel

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