SI5419DU-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI5419DU-T1-GE3 is a SI5419DU-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 12A 20mΩ@10V,6.6A 2.5V@250uA 1PCSPChannel PowerPAK MOSFETs ROHS. This product comes in a PowerPAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 12A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@10V,6.6A
  • Power Dissipation (Pd): 3.1W;31W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.4nF@15V
  • Total Gate Charge (Qg@Vgs): 45nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.

More on SI5419DU-T1-GE3

Full Specifications of SI5419DU-T1-GE3

Model NumberSI5419DU-T1-GE3
Model NameVishay Intertech SI5419DU-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 12A 20mΩ@10V,6.6A 2.5V@250uA 1PCSPChannel PowerPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.400 grams / 0.01411 oz
Package / CasePowerPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)12A
Drain Source On Resistance (RDS(on)@Vgs,Id)20mΩ@10V,6.6A
Power Dissipation (Pd)3.1W;31W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.4nF@15V
Total Gate Charge (Qg@Vgs)45nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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