SI5442DU-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI5442DU-T1-GE3 is a SI5442DU-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 25A 10mΩ@4.5V,8A 900mV@250uA 1PCSNChannel SMD MOSFETs ROHS. This product comes in a SMD package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 25A
  • Power Dissipation (Pd): 3.1W;31W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@4.5V,8A
  • Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.7nF@10V
  • Total Gate Charge (Qg@Vgs): 45nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.116 grams.

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Full Specifications of SI5442DU-T1-GE3

Model NumberSI5442DU-T1-GE3
Model NameVishay Intertech SI5442DU-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 25A 10mΩ@4.5V,8A 900mV@250uA 1PCSNChannel SMD MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.116 grams / 0.004092 oz
Package / CaseSMD
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)25A
Power Dissipation (Pd)3.1W;31W
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)@Id)900mV@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.7nF@10V
Total Gate Charge (Qg@Vgs)45nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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