SI5476DU-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI5476DU-T1-GE3 is a SI5476DU-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 12A 34mΩ@10V,4.6A 3V@250uA 1PCSNChannel PowerPAK MOSFETs ROHS. This product comes in a PowerPAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 12A
  • Power Dissipation (Pd): 3.1W;31W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 34mΩ@10V,4.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.1nF@30V
  • Total Gate Charge (Qg@Vgs): 32nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.

More on SI5476DU-T1-GE3

Full Specifications of SI5476DU-T1-GE3

Model NumberSI5476DU-T1-GE3
Model NameVishay Intertech SI5476DU-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 12A 34mΩ@10V,4.6A 3V@250uA 1PCSNChannel PowerPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.400 grams / 0.01411 oz
Package / CasePowerPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)12A
Power Dissipation (Pd)3.1W;31W
Drain Source On Resistance (RDS(on)@Vgs,Id)34mΩ@10V,4.6A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.1nF@30V
Total Gate Charge (Qg@Vgs)32nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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