SI5515CDC-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI5515CDC-T1-GE3 is a SI5515CDC-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 4A 3.1W 36mΩ@4.5V,6A 800mV@250uA 1PCSNChannel+1PCSPChannel ChipFET1206-8 MOSFETs ROHS. This product comes in a ChipFET1206-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 4A
  • Power Dissipation (Pd): 3.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 36mΩ@4.5V,6A
  • Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
  • Type: 1PCSNChannel+1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.075 grams.

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Full Specifications of SI5515CDC-T1-GE3

Model NumberSI5515CDC-T1-GE3
Model NameVishay Intertech SI5515CDC-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 4A 3.1W 36mΩ@4.5V,6A 800mV@250uA 1PCSNChannel+1PCSPChannel ChipFET1206-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.075 grams / 0.002646 oz
Package / CaseChipFET1206-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)4A
Power Dissipation (Pd)3.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)36mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Type1PCSNChannel+1PCSPChannel

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