SI5902BDC-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI5902BDC-T1-E3 is a SI5902BDC-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 4A 65mΩ@3.1A,10V 3V@250uA 2 N-Channel SMD-8P MOSFETs ROHS. This product comes in a SMD-8P package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@3.1A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 220pF@15V
  • Total Gate Charge (Qg@Vgs): 7nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SI5902BDC-T1-E3

Model NumberSI5902BDC-T1-E3
Model NameVishay Intertech SI5902BDC-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description30V 4A 65mΩ@3.1A,10V 3V@250uA 2 N-Channel SMD-8P MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSMD-8P
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)65mΩ@3.1A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)220pF@15V
Total Gate Charge (Qg@Vgs)7nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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