SI5902BDC-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI5902BDC-T1-GE3 is a SI5902BDC-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 4A 65mΩ@10V,3.1A 3.12W 3V@250uA 2 N-Channel ChipFET1206-8 MOSFETs ROHS. This product comes in a ChipFET1206-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@10V,3.1A
  • Power Dissipation (Pd): 3.12W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.075 grams.

More on SI5902BDC-T1-GE3

Full Specifications of SI5902BDC-T1-GE3

Model NumberSI5902BDC-T1-GE3
Model NameVishay Intertech SI5902BDC-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 4A 65mΩ@10V,3.1A 3.12W 3V@250uA 2 N-Channel ChipFET1206-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.075 grams / 0.002646 oz
Package / CaseChipFET1206-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)65mΩ@10V,3.1A
Power Dissipation (Pd)3.12W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 N-Channel

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