SI5922DU-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI5922DU-T1-GE3 is a SI5922DU-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 6A 10.4W 19.2mΩ@5A,10V 2.2V@250uA 2 N-Channel PowerPAK MOSFETs ROHS. This product comes in a PowerPAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6A
  • Power Dissipation (Pd): 10.4W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 19.2mΩ@5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 765pF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SI5922DU-T1-GE3

Model NumberSI5922DU-T1-GE3
Model NameVishay Intertech SI5922DU-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 6A 10.4W 19.2mΩ@5A,10V 2.2V@250uA 2 N-Channel PowerPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6A
Power Dissipation (Pd)10.4W
Drain Source On Resistance (RDS(on)@Vgs,Id)19.2mΩ@5A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)765pF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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