SI5936DU-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI5936DU-T1-GE3 is a SI5936DU-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 6A 30mΩ@10V,5A 10.4W 2.2V@250uA 2 N-Channel SMD MOSFETs ROHS. This product comes in a SMD package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 30mΩ@10V,5A
  • Power Dissipation (Pd): 10.4W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.116 grams.

More on SI5936DU-T1-GE3

Full Specifications of SI5936DU-T1-GE3

Model NumberSI5936DU-T1-GE3
Model NameVishay Intertech SI5936DU-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 6A 30mΩ@10V,5A 10.4W 2.2V@250uA 2 N-Channel SMD MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.116 grams / 0.004092 oz
Package / CaseSMD
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6A
Drain Source On Resistance (RDS(on)@Vgs,Id)30mΩ@10V,5A
Power Dissipation (Pd)10.4W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type2 N-Channel

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