SI6415DQ-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI6415DQ-T1-GE3 is a SI6415DQ-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 6.4A 19mΩ@6.5A,10V 1.5W 1V@250uA 1PCSPChannel TSSOP-8 MOSFETs ROHS. This product comes in a TSSOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 19mΩ@6.5A,10V
  • Power Dissipation (Pd): 1.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Total Gate Charge (Qg@Vgs): 70nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.081 grams.

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Full Specifications of SI6415DQ-T1-GE3

Model NumberSI6415DQ-T1-GE3
Model NameVishay Intertech SI6415DQ-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 6.4A 19mΩ@6.5A,10V 1.5W 1V@250uA 1PCSPChannel TSSOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.081 grams / 0.002857 oz
Package / CaseTSSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)19mΩ@6.5A,10V
Power Dissipation (Pd)1.5W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSPChannel
Total Gate Charge (Qg@Vgs)70nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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