SI6954ADQ-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI6954ADQ-T1-E3 is a SI6954ADQ-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 3.1A 830mW 53mΩ@3.4A,10V 1V@250uA 2 N-Channel TSSOP-8 MOSFETs ROHS. This product comes in a TSSOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 3.1A
  • Power Dissipation (Pd): 830mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 53mΩ@3.4A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 2 N-Channel
  • Total Gate Charge (Qg@Vgs): 16nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI6954ADQ-T1-E3

Full Specifications of SI6954ADQ-T1-E3

Model NumberSI6954ADQ-T1-E3
Model NameVishay Intertech SI6954ADQ-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description30V 3.1A 830mW 53mΩ@3.4A,10V 1V@250uA 2 N-Channel TSSOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTSSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)3.1A
Power Dissipation (Pd)830mW
Drain Source On Resistance (RDS(on)@Vgs,Id)53mΩ@3.4A,10V
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)16nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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