SI6968BEDQ-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI6968BEDQ-T1-GE3 is a SI6968BEDQ-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 5.2A 22mΩ@6.5A,4.5V 1W 1.6V@250uA 2 N-Channel TSSOP-8 MOSFETs ROHS. This product comes in a TSSOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Configuration: Common Drain
  • Continuous Drain Current (Id): 5.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@6.5A,4.5V
  • Power Dissipation (Pd): 1W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Type: 2 N-Channel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.17 grams.

More on SI6968BEDQ-T1-GE3

Full Specifications of SI6968BEDQ-T1-GE3

Model NumberSI6968BEDQ-T1-GE3
Model NameVishay Intertech SI6968BEDQ-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 5.2A 22mΩ@6.5A,4.5V 1W 1.6V@250uA 2 N-Channel TSSOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.170 grams / 0.005997 oz
Package / CaseTSSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
ConfigurationCommon Drain
Continuous Drain Current (Id)5.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)22mΩ@6.5A,4.5V
Power Dissipation (Pd)1W
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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