SI7104DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7104DN-T1-GE3 is a SI7104DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 35A 3.7mΩ@26.1A,4.5V 1.8V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 12V
• Continuous Drain Current (Id): 35A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 3.7mΩ@26.1A,4.5V
• Power Dissipation (Pd): 3.8W;52W
• Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 2.8nF@6V
• Total Gate Charge (Qg@Vgs): 70nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.