SI7108DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7108DN-T1-GE3 is a SI7108DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 14A 4.9mΩ@10V,22A 1.5W 2V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 14A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.9mΩ@10V,22A
  • Power Dissipation (Pd): 1.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.066 grams.

More on SI7108DN-T1-GE3

Full Specifications of SI7108DN-T1-GE3

Model NumberSI7108DN-T1-GE3
Model NameVishay Intertech SI7108DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 14A 4.9mΩ@10V,22A 1.5W 2V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.066 grams / 0.002328 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)14A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.9mΩ@10V,22A
Power Dissipation (Pd)1.5W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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