SI7112DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7112DN-T1-GE3 is a SI7112DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 11.3A 1.5W 7.5mΩ@17.8A,10V 1.5V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 11.3A
  • Power Dissipation (Pd): 1.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@17.8A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.61nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -50℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.08 grams.

More on SI7112DN-T1-GE3

Full Specifications of SI7112DN-T1-GE3

Model NumberSI7112DN-T1-GE3
Model NameVishay Intertech SI7112DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 11.3A 1.5W 7.5mΩ@17.8A,10V 1.5V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.080 grams / 0.002822 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)11.3A
Power Dissipation (Pd)1.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)7.5mΩ@17.8A,10V
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.61nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-50℃~+150℃@(Tj)

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