SI7113ADN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7113ADN-T1-GE3 is a SI7113ADN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 10.8A 132mΩ@3.8A,10V 27.8W 2.6V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 10.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 132mΩ@3.8A,10V
  • Power Dissipation (Pd): 27.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.6V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 515pF@50V
  • Total Gate Charge (Qg@Vgs): 16.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.15 grams.

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Full Specifications of SI7113ADN-T1-GE3

Model NumberSI7113ADN-T1-GE3
Model NameVishay Intertech SI7113ADN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 10.8A 132mΩ@3.8A,10V 27.8W 2.6V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.150 grams / 0.005291 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)10.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)132mΩ@3.8A,10V
Power Dissipation (Pd)27.8W
Gate Threshold Voltage (Vgs(th)@Id)2.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)515pF@50V
Total Gate Charge (Qg@Vgs)16.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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