SI7114DN-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI7114DN-T1-E3 is a SI7114DN-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 11.7A 1.5W 7.5mΩ@10V,18.3A 3V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 11.7A
  • Power Dissipation (Pd): 1.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@10V,18.3A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.066 grams.

More on SI7114DN-T1-E3

Full Specifications of SI7114DN-T1-E3

Model NumberSI7114DN-T1-E3
Model NameVishay Intertech SI7114DN-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description30V 11.7A 1.5W 7.5mΩ@10V,18.3A 3V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.066 grams / 0.002328 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)11.7A
Power Dissipation (Pd)1.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)7.5mΩ@10V,18.3A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI7114DN-T1-E3 With Other 200 Models

Related Models - SI7114DN-T1-E3 Alternative

Scroll to Top