SI7115DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7115DN-T1-GE3 is a SI7115DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 8.9A 295mΩ@10V,4A 4V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 8.9A
  • Power Dissipation (Pd): 3.7W;52W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 295mΩ@10V,4A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.19nF@50V
  • Total Gate Charge (Qg@Vgs): 42nC@10V
  • Operating Temperature: -50℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.175 grams.

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Full Specifications of SI7115DN-T1-GE3

Model NumberSI7115DN-T1-GE3
Model NameVishay Intertech SI7115DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 8.9A 295mΩ@10V,4A 4V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.175 grams / 0.006173 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)8.9A
Power Dissipation (Pd)3.7W;52W
Drain Source On Resistance (RDS(on)@Vgs,Id)295mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.19nF@50V
Total Gate Charge (Qg@Vgs)42nC@10V
Operating Temperature-50℃~+150℃@(Tj)

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