SI7135DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7135DP-T1-GE3 is a SI7135DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 60A 3.9mΩ@20A,10V 3V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 60A
  • Power Dissipation (Pd): 6.25W;104W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 8.65nF@15V
  • Total Gate Charge (Qg@Vgs): 250nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.244 grams.

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Full Specifications of SI7135DP-T1-GE3

Model NumberSI7135DP-T1-GE3
Model NameVishay Intertech SI7135DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 60A 3.9mΩ@20A,10V 3V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.244 grams / 0.008607 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)60A
Power Dissipation (Pd)6.25W;104W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.9mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)8.65nF@15V
Total Gate Charge (Qg@Vgs)250nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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