Vishay Intertech SI7149DP-T1-GE3 is a SI7149DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 50A 5.2mΩ@15A,10V 69W 2.5V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 50A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.2mΩ@15A,10V
- Power Dissipation (Pd): 69W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 4.59nF@15V
- Total Gate Charge (Qg@Vgs): 147nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.252 grams.
More on SI7149DP-T1-GE3
Full Specifications of SI7149DP-T1-GE3
Model Number | SI7149DP-T1-GE3 |
Model Name | Vishay Intertech SI7149DP-T1-GE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 30V 50A 5.2mΩ@15A,10V 69W 2.5V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.252 grams / 0.008889 oz |
Package / Case | PowerPAK-SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 50A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.2mΩ@15A,10V |
Power Dissipation (Pd) | 69W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 4.59nF@15V |
Total Gate Charge (Qg@Vgs) | 147nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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