SI7157DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7157DP-T1-GE3 is a SI7157DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 60A 1.6mΩ@25A,10V 1.4V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6mΩ@25A,10V
  • Power Dissipation (Pd): 6.25W;104W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 22nF@10V
  • Total Gate Charge (Qg@Vgs): 625nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI7157DP-T1-GE3

Full Specifications of SI7157DP-T1-GE3

Model NumberSI7157DP-T1-GE3
Model NameVishay Intertech SI7157DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 60A 1.6mΩ@25A,10V 1.4V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.6mΩ@25A,10V
Power Dissipation (Pd)6.25W;104W
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)22nF@10V
Total Gate Charge (Qg@Vgs)625nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI7157DP-T1-GE3 With Other 200 Models

Related Models - SI7157DP-T1-GE3 Alternative

Scroll to Top