SI7172DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7172DP-T1-GE3 is a SI7172DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 200V 25A 70mΩ@10V,5.9A 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as null. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 25A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 70mΩ@10V,5.9A
  • Power Dissipation (Pd): 5.4W;96W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.25nF@100V
  • Total Gate Charge (Qg@Vgs): 77nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

More on SI7172DP-T1-GE3

Full Specifications of SI7172DP-T1-GE3

Model NumberSI7172DP-T1-GE3
Model NameVishay Intertech SI7172DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description200V 25A 70mΩ@10V,5.9A 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CasePowerPAK-SO-8
Package / Arrange
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)70mΩ@10V,5.9A
Power Dissipation (Pd)5.4W;96W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.25nF@100V
Total Gate Charge (Qg@Vgs)77nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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