SI7288DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7288DP-T1-GE3 is a SI7288DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 20A 19mΩ@10V,10A 15.6W 2.8V@250uA 2 N-Channel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 20A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 19mΩ@10V,10A
• Power Dissipation (Pd): 15.6W
• Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 565pF@20V
• Total Gate Charge (Qg@Vgs): 15nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.234 grams.