SI7308DN-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI7308DN-T1-E3 is a SI7308DN-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 6A 58mΩ@10V,5.4A 3V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 58mΩ@10V,5.4A
  • Power Dissipation (Pd): 3.2W;19.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 665pF@15V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.176 grams.

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Full Specifications of SI7308DN-T1-E3

Model NumberSI7308DN-T1-E3
Model NameVishay Intertech SI7308DN-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description60V 6A 58mΩ@10V,5.4A 3V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.176 grams / 0.006208 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)6A
Drain Source On Resistance (RDS(on)@Vgs,Id)58mΩ@10V,5.4A
Power Dissipation (Pd)3.2W;19.8W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)665pF@15V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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