SI7309DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7309DN-T1-GE3 is a SI7309DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 8A 115mΩ@3.9A,10V 3V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 115mΩ@3.9A,10V
  • Power Dissipation (Pd): 3.2W;19.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 600pF@30V
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.29 grams.

More on SI7309DN-T1-GE3

Full Specifications of SI7309DN-T1-GE3

Model NumberSI7309DN-T1-GE3
Model NameVishay Intertech SI7309DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 8A 115mΩ@3.9A,10V 3V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.290 grams / 0.010229 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)115mΩ@3.9A,10V
Power Dissipation (Pd)3.2W;19.8W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)600pF@30V
Total Gate Charge (Qg@Vgs)22nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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