SI7315DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7315DN-T1-GE3 is a SI7315DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 8.9A 315mΩ@10V,4A 4V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 8.9A
  • Power Dissipation (Pd): 3.8W;52W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 315mΩ@10V,4A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 880pF@75V
  • Total Gate Charge (Qg@Vgs): 30nC@10V
  • Operating Temperature: -50℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.065 grams.

More on SI7315DN-T1-GE3

Full Specifications of SI7315DN-T1-GE3

Model NumberSI7315DN-T1-GE3
Model NameVishay Intertech SI7315DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 8.9A 315mΩ@10V,4A 4V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.065 grams / 0.002293 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)8.9A
Power Dissipation (Pd)3.8W;52W
Drain Source On Resistance (RDS(on)@Vgs,Id)315mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)880pF@75V
Total Gate Charge (Qg@Vgs)30nC@10V
Operating Temperature-50℃~+150℃@(Tj)

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