SI7430DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7430DP-T1-GE3 is a SI7430DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 26A 45mΩ@10V,5A 4.5V@250uA 1PCSNChannel PowerPAKSO-8 MOSFETs ROHS. This product comes in a PowerPAKSO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 26A
  • Power Dissipation (Pd): 5.2W;64W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 45mΩ@10V,5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.735nF@50V
  • Total Gate Charge (Qg@Vgs): 43nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.

More on SI7430DP-T1-GE3

Full Specifications of SI7430DP-T1-GE3

Model NumberSI7430DP-T1-GE3
Model NameVishay Intertech SI7430DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 26A 45mΩ@10V,5A 4.5V@250uA 1PCSNChannel PowerPAKSO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.131 grams / 0.004621 oz
Package / CasePowerPAKSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)26A
Power Dissipation (Pd)5.2W;64W
Drain Source On Resistance (RDS(on)@Vgs,Id)45mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.735nF@50V
Total Gate Charge (Qg@Vgs)43nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI7430DP-T1-GE3 With Other 200 Models

Related Models - SI7430DP-T1-GE3 Alternative

Scroll to Top