Vishay Intertech SI7439DP-T1-E3 is a SI7439DP-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 3A 1.9W 90mΩ@5.2A,10V 4V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 3A
- Power Dissipation (Pd): 1.9W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 90mΩ@5.2A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSPChannel
- Total Gate Charge (Qg@Vgs): 135nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SI7439DP-T1-E3
Full Specifications of SI7439DP-T1-E3
Model Number | SI7439DP-T1-E3 |
Model Name | Vishay Intertech SI7439DP-T1-E3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 150V 3A 1.9W 90mΩ@5.2A,10V 4V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | PowerPAK-SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 150V |
Continuous Drain Current (Id) | 3A |
Power Dissipation (Pd) | 1.9W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 90mΩ@5.2A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSPChannel |
Total Gate Charge (Qg@Vgs) | 135nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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