SI7456DP-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI7456DP-T1-E3 is a SI7456DP-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 5.7A 25mΩ@10V,9.3A 1.9W 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 5.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@10V,9.3A
  • Power Dissipation (Pd): 1.9W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 44nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.

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Full Specifications of SI7456DP-T1-E3

Model NumberSI7456DP-T1-E3
Model NameVishay Intertech SI7456DP-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description100V 5.7A 25mΩ@10V,9.3A 1.9W 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.131 grams / 0.004621 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)5.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)25mΩ@10V,9.3A
Power Dissipation (Pd)1.9W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)44nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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