Vishay Intertech SI7456DP-T1-GE3 is a SI7456DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 5.7A 25mΩ@10V,9.3A 1.9W 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 5.7A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@10V,9.3A
- Power Dissipation (Pd): 1.9W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Total Gate Charge (Qg@Vgs): 44nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.
More on SI7456DP-T1-GE3
Full Specifications of SI7456DP-T1-GE3
Model Number | SI7456DP-T1-GE3 |
Model Name | Vishay Intertech SI7456DP-T1-GE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 100V 5.7A 25mΩ@10V,9.3A 1.9W 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.131 grams / 0.004621 oz |
Package / Case | PowerPAK-SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 5.7A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 25mΩ@10V,9.3A |
Power Dissipation (Pd) | 1.9W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Total Gate Charge (Qg@Vgs) | 44nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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