SI7478DP-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI7478DP-T1-E3 is a SI7478DP-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 15A 7.5mΩ@20A,10V 1.9W 3V@250uA 1PCSNChannel PowerPAKSO-8 MOSFETs ROHS. This product comes in a PowerPAKSO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 15A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@20A,10V
  • Power Dissipation (Pd): 1.9W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 160nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.13 grams.

More on SI7478DP-T1-E3

Full Specifications of SI7478DP-T1-E3

Model NumberSI7478DP-T1-E3
Model NameVishay Intertech SI7478DP-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description60V 15A 7.5mΩ@20A,10V 1.9W 3V@250uA 1PCSNChannel PowerPAKSO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.130 grams / 0.004586 oz
Package / CasePowerPAKSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)15A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.5mΩ@20A,10V
Power Dissipation (Pd)1.9W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)160nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI7478DP-T1-E3 With Other 200 Models

Related Models - SI7478DP-T1-E3 Alternative

Scroll to Top