SI7489DP-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI7489DP-T1-E3 is a SI7489DP-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 28A 41mΩ@10V,7.8A 3V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 28A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 41mΩ@10V,7.8A
  • Power Dissipation (Pd): 5.2W;83W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 4.6nF@50V
  • Total Gate Charge (Qg@Vgs): 160nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.

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Full Specifications of SI7489DP-T1-E3

Model NumberSI7489DP-T1-E3
Model NameVishay Intertech SI7489DP-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description100V 28A 41mΩ@10V,7.8A 3V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.131 grams / 0.004621 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)28A
Drain Source On Resistance (RDS(on)@Vgs,Id)41mΩ@10V,7.8A
Power Dissipation (Pd)5.2W;83W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)4.6nF@50V
Total Gate Charge (Qg@Vgs)160nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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