Vishay Intertech SI7615CDN-T1-GE3 is a SI7615CDN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 35A 33W 9mΩ@4.5V,12A 1V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 35A
- Power Dissipation (Pd): 33W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@4.5V,12A
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 3.86nF@10V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.176 grams.
More on SI7615CDN-T1-GE3
Full Specifications of SI7615CDN-T1-GE3
Model Number | SI7615CDN-T1-GE3 |
Model Name | Vishay Intertech SI7615CDN-T1-GE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 20V 35A 33W 9mΩ@4.5V,12A 1V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.176 grams / 0.006208 oz |
Package / Case | PowerPAK1212-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 35A |
Power Dissipation (Pd) | 33W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 9mΩ@4.5V,12A |
Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 3.86nF@10V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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