SI7738DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7738DP-T1-GE3 is a SI7738DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 30A 38mΩ@10V,7.7A 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 38mΩ@10V,7.7A
  • Power Dissipation (Pd): 5.4W;96W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.1nF@75V
  • Total Gate Charge (Qg@Vgs): 53nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.

More on SI7738DP-T1-GE3

Full Specifications of SI7738DP-T1-GE3

Model NumberSI7738DP-T1-GE3
Model NameVishay Intertech SI7738DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 30A 38mΩ@10V,7.7A 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.131 grams / 0.004621 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)38mΩ@10V,7.7A
Power Dissipation (Pd)5.4W;96W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.1nF@75V
Total Gate Charge (Qg@Vgs)53nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI7738DP-T1-GE3 With Other 200 Models

Related Models - SI7738DP-T1-GE3 Alternative

Scroll to Top