SI7846DP-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI7846DP-T1-E3 is a SI7846DP-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 4A 50mΩ@10V,5A 1.9W 4.5V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@10V,5A
  • Power Dissipation (Pd): 1.9W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.129 grams.

More on SI7846DP-T1-E3

Full Specifications of SI7846DP-T1-E3

Model NumberSI7846DP-T1-E3
Model NameVishay Intertech SI7846DP-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description150V 4A 50mΩ@10V,5A 1.9W 4.5V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.129 grams / 0.00455 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)50mΩ@10V,5A
Power Dissipation (Pd)1.9W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Type1PCSNChannel

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