SI7846DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7846DP-T1-GE3 is a SI7846DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 4A 50mΩ@5A,10V 1.9W 4.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@5A,10V
  • Power Dissipation (Pd): 1.9W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 36nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.244 grams.

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Full Specifications of SI7846DP-T1-GE3

Model NumberSI7846DP-T1-GE3
Model NameVishay Intertech SI7846DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 4A 50mΩ@5A,10V 1.9W 4.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.244 grams / 0.008607 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)50mΩ@5A,10V
Power Dissipation (Pd)1.9W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)36nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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