SI7852DP-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI7852DP-T1-E3 is a SI7852DP-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 7.6A 16.5mΩ@10V,10A 1.9W 2V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 80V
• Continuous Drain Current (Id): 7.6A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 16.5mΩ@10V,10A
• Power Dissipation (Pd): 1.9W
• Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
• Type: 1PCSNChannel
• Total Gate Charge (Qg@Vgs): 41nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.