SI7852DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7852DP-T1-GE3 is a SI7852DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 7.6A 16.5mΩ@10V,10A 1.9W 2V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 7.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16.5mΩ@10V,10A
  • Power Dissipation (Pd): 1.9W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 41nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.13 grams.

More on SI7852DP-T1-GE3

Full Specifications of SI7852DP-T1-GE3

Model NumberSI7852DP-T1-GE3
Model NameVishay Intertech SI7852DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 7.6A 16.5mΩ@10V,10A 1.9W 2V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.130 grams / 0.004586 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)7.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)16.5mΩ@10V,10A
Power Dissipation (Pd)1.9W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)41nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI7852DP-T1-GE3 With Other 200 Models

Related Models - SI7852DP-T1-GE3 Alternative

Scroll to Top