SI7884BDP-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI7884BDP-T1-E3 is a SI7884BDP-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 58A 7.5mΩ@16A,10V 3V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 58A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@16A,10V
  • Power Dissipation (Pd): 4.6W;46W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.54nF@20V
  • Total Gate Charge (Qg@Vgs): 77nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI7884BDP-T1-E3

Full Specifications of SI7884BDP-T1-E3

Model NumberSI7884BDP-T1-E3
Model NameVishay Intertech SI7884BDP-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description40V 58A 7.5mΩ@16A,10V 3V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)58A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.5mΩ@16A,10V
Power Dissipation (Pd)4.6W;46W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.54nF@20V
Total Gate Charge (Qg@Vgs)77nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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