SI7892BDP-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI7892BDP-T1-E3 is a SI7892BDP-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 15A 4.2mΩ@25A,10V 1.8W 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 15A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2mΩ@25A,10V
  • Power Dissipation (Pd): 1.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.775nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.14 grams.

More on SI7892BDP-T1-E3

Full Specifications of SI7892BDP-T1-E3

Model NumberSI7892BDP-T1-E3
Model NameVishay Intertech SI7892BDP-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description30V 15A 4.2mΩ@25A,10V 1.8W 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.140 grams / 0.004938 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)15A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.2mΩ@25A,10V
Power Dissipation (Pd)1.8W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.775nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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