SI7898DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7898DP-T1-GE3 is a SI7898DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 3A 1.9W 85mΩ@10V,3.5A 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 3A
  • Power Dissipation (Pd): 1.9W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 85mΩ@10V,3.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 21nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.

More on SI7898DP-T1-GE3

Full Specifications of SI7898DP-T1-GE3

Model NumberSI7898DP-T1-GE3
Model NameVishay Intertech SI7898DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 3A 1.9W 85mΩ@10V,3.5A 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.131 grams / 0.004621 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)3A
Power Dissipation (Pd)1.9W
Drain Source On Resistance (RDS(on)@Vgs,Id)85mΩ@10V,3.5A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)21nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI7898DP-T1-GE3 With Other 200 Models

Related Models - SI7898DP-T1-GE3 Alternative

Scroll to Top