SI7922DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7922DN-T1-GE3 is a SI7922DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 1.8A 1.3W 195mΩ@10V,2.5A 3.5V@250uA 2 N-Channel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 1.8A
  • Power Dissipation (Pd): 1.3W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 195mΩ@10V,2.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.176 grams.

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Full Specifications of SI7922DN-T1-GE3

Model NumberSI7922DN-T1-GE3
Model NameVishay Intertech SI7922DN-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 1.8A 1.3W 195mΩ@10V,2.5A 3.5V@250uA 2 N-Channel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.176 grams / 0.006208 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)1.8A
Power Dissipation (Pd)1.3W
Drain Source On Resistance (RDS(on)@Vgs,Id)195mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type2 N-Channel

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