SI7923DN-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7923DN-T1-GE3 is a SI7923DN-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 4.3A 47mΩ@6.4A,10V 1.3W 3V@250uA 2 P-Channel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 4.3A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 47mΩ@6.4A,10V
• Power Dissipation (Pd): 1.3W
• Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
• Type: 2 P-Channel
• Total Gate Charge (Qg@Vgs): 21nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.169 grams.