SI7942DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7942DP-T1-GE3 is a SI7942DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 3.8A 49mΩ@5.9A,10V 4V@250uA 2 N-Channel PowerPAK-SO-8-Dual MOSFETs ROHS. This product comes in a PowerPAK-SO-8-Dual package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 3.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 49mΩ@5.9A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 2 N-Channel
  • Total Gate Charge (Qg@Vgs): 24nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SI7942DP-T1-GE3

Model NumberSI7942DP-T1-GE3
Model NameVishay Intertech SI7942DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 3.8A 49mΩ@5.9A,10V 4V@250uA 2 N-Channel PowerPAK-SO-8-Dual MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8-Dual
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)3.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)49mΩ@5.9A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)24nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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