SI7956DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7956DP-T1-GE3 is a SI7956DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 2.6A 105mΩ@10V,4.1A 1.4W 4V@250uA 2 N-Channel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 2.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 105mΩ@10V,4.1A
  • Power Dissipation (Pd): 1.4W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

More on SI7956DP-T1-GE3

Full Specifications of SI7956DP-T1-GE3

Model NumberSI7956DP-T1-GE3
Model NameVishay Intertech SI7956DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 2.6A 105mΩ@10V,4.1A 1.4W 4V@250uA 2 N-Channel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)2.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)105mΩ@10V,4.1A
Power Dissipation (Pd)1.4W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type2 N-Channel

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