SI7998DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI7998DP-T1-GE3 is a SI7998DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 9.3mΩ@15A,10V 2.5V@250uA 2 N-Channel PowerPAK-SO-8-Dual MOSFETs ROHS. This product comes in a PowerPAK-SO-8-Dual package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 25A;30A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 9.3mΩ@15A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 1.1nF@15V
• Total Gate Charge (Qg@Vgs): 26nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.13 grams.