SI8406DB-T2-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8406DB-T2-E1 is a SI8406DB-T2-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 16A 33mΩ@1A,4.5V 850mV@250uA 1PCSNChannel MicroFoot-6 MOSFETs ROHS. This product comes in a MicroFoot-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 16A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@1A,4.5V
  • Power Dissipation (Pd): 2.77W;13W
  • Gate Threshold Voltage (Vgs(th)@Id): 850mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 830pF@10V
  • Total Gate Charge (Qg@Vgs): 20nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI8406DB-T2-E1

Full Specifications of SI8406DB-T2-E1

Model NumberSI8406DB-T2-E1
Model NameVishay Intertech SI8406DB-T2-E1
CategoryMOSFETs
BrandVishay Intertech
Description20V 16A 33mΩ@1A,4.5V 850mV@250uA 1PCSNChannel MicroFoot-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseMicroFoot-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)16A
Drain Source On Resistance (RDS(on)@Vgs,Id)33mΩ@1A,4.5V
Power Dissipation (Pd)2.77W;13W
Gate Threshold Voltage (Vgs(th)@Id)850mV@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)830pF@10V
Total Gate Charge (Qg@Vgs)20nC@8V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI8406DB-T2-E1 With Other 200 Models

Related Models - SI8406DB-T2-E1 Alternative

Scroll to Top