SI8410DB-T2-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8410DB-T2-E1 is a SI8410DB-T2-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 3.8A 37mΩ@1.5A,4.5V 850mV@250uA 1PCSNChannel MicroFoot-4(1x1) MOSFETs ROHS. This product comes in a MicroFoot-4(1x1) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3.8A
  • Power Dissipation (Pd): 780mW;1.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 37mΩ@1.5A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 850mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 620pF@10V
  • Total Gate Charge (Qg@Vgs): 16nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI8410DB-T2-E1

Full Specifications of SI8410DB-T2-E1

Model NumberSI8410DB-T2-E1
Model NameVishay Intertech SI8410DB-T2-E1
CategoryMOSFETs
BrandVishay Intertech
Description20V 3.8A 37mΩ@1.5A,4.5V 850mV@250uA 1PCSNChannel MicroFoot-4(1x1) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseMicroFoot-4(1x1)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)3.8A
Power Dissipation (Pd)780mW;1.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)37mΩ@1.5A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)850mV@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)620pF@10V
Total Gate Charge (Qg@Vgs)16nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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